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onsemi MC74VHC541DWR2GRoHS

Manufacturer
MPN
MC74VHC541DWR2G
LCSC Part #
C899727
Packaging
SOIC-20-300mil
Customer #
Key Attributes
Octal Bus Buffer
Datasheetpdf icononsemi MC74VHC541DWR2G
In-Stock: 91
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QtyUnit PriceTotal Amount
1+$ 1.6922$ 1.69
10+$ 1.4436$ 14.44
30+$ 1.2891$ 38.67
100+$ 1.1313$ 113.13
500+$ 1.0596$ 529.80
1,000+$ 1.0278$ 1027.80
Standard Packaging1000/Full Reel
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Logic/Buffers, Drivers, Receivers, Transceivers
Manufactureronsemi
PackagingSOIC-20-300mil
Input type-
Voltage - Supply2V~5.5V
Output TypeTri-State
Current - Output High(IOH)8mA
Series74VHC
Operating Temperature-55℃~+125℃
Current - Output Low(IOL)8mA
Number of Bits per Element8
Channel TypeUnidirectional
FeaturesOutput enable;Power-off isolation
Number of Elements1
Quiescent Current4uA
Propagation Delay3.7ns@5V,50pF

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging1000
Sales UnitPiece

Introduction

AI Translation

The MC74VHC541 is an advanced high speed CMOS octal bus buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The MC74VHC541 is a noninverting type. When either OE1 or OE2 are high, the terminal outputs are in the high impedance state. The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output. The inputs tolerate voltages up to 7.0 V, allowing the interface of 5.0 V systems to 3.0 V systems.

Features

AI Translation
  • High Speed: tpD = 3.7ns (Typ) at VCC = 5.0 V
  • Low Power Dissipation: ICC = 4 μA (Max) at TA = 25℃
  • High Noise Immunity: VNI = VNIL = 28% VCC
  • Power Down Protection Provided on Inputs
  • Balanced Propagation Delays
  • Designed for 2.0 V to 5.5 V Operating Range
  • Low Noise: VOLP = 1.2 V (Max)
  • Pin and Function Compatible with Other Standard Logic Families
  • Latchup Performance Exceeds 300 mA
  • ESD Performance: HBM > 2000 V; Machine Model > 200 V
  • Chip Complexity: 134 FETs or 33.5 Equivalent Gates
  • These Devices are Pb−Free and are RoHS Compliant