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onsemi FCPF11N60TRoHS

Manufacturer
onsemi
MPN
FCPF11N60T
LCSC Part #
C899122
Packaging
TO-220F-3
Customer #
Key Attributes
650V 11A 3V 36W 320mΩ@10V 1 N-channel TO-220F-3 Single FETs, MOSFETs RoHS
Datasheetpdf icononsemi FCPF11N60T
In-Stock: 45
45 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 4.1877$ 4.19
10+$ 3.6083$ 36.08
50+$ 3.094$ 154.70
100+$ 2.7457$ 274.57
500+$ 2.5846$ 1292.30
1,000+$ 2.513$ 2513.00
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingTO-220F-3
Drain to Source Voltage650V
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation36W
Reverse Transfer Capacitance (Crss@Vds)82pF
RDS(on)320mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.49nF
Gate Charge(Qg)52nC@480V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

SuperFET MOSFETs are the first-generation high-voltage super junction (SJ) MOSFET product series, utilizing charge balance technology to deliver excellent low on-resistance and low gate charge performance. This technology is designed to minimize conduction losses while providing superior switching performance, dv/dt rate, and higher avalanche energy. As a result, SuperFET MOSFETs are well suited for switching power supply applications such as power factor correction (PFC), server/telecom power supplies, flat panel TV power supplies, ATX power supplies, and industrial power applications.

Features

AI Translation
  • 650 V @ Tj = 150°C
  • Typical Rds(on) = 0.32Ω
  • Ultra-low gate charge (typical Qg = 40nC)
  • Low effective output capacitance (typical Coss.eff = 95pF)
  • 100% avalanche tested
  • RoHS compliant

Applications

AI Translation
  • Power Factor Correction (PFC)
  • Server/Telecom Power Supplies
  • Flat Panel TV Power Supplies
  • ATX Power Supplies
  • Industrial Power Applications