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onsemi BC847BPDW1T3GRoHS

Manufacturer
MPN
BC847BPDW1T3G
LCSC Part #
C896676
Packaging
SOT-363
Customer #
Key Attributes
TRANS NPN+PNP 45V 100mA SOT-363
Datasheetpdf icononsemi BC847BPDW1T3G
In-Stock: 5
5 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
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QtyUnit PriceTotal Amount
5+$ 0.1299$ 0.65
50+$ 0.128$ 6.40
150+$ 0.1268$ 19.02
500+$ 0.1256$ 62.80
Standard Packaging10000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays
Manufactureronsemi
PackagingSOT-363
Current - Collector Cutoff15nA
DC Current Gain150
Collector - Emitter Voltage VCEO45V
Pd - Power Dissipation380mW
Emitter-Base Voltage VEBO6V
Transition frequency(fT)100MHz
typeNPN+PNP
Vce Saturation(VCE(sat))100mV
Number1 NPN + 1 PNP
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃

Introduction

AI Translation

These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications.

Features

AI Translation
  • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant