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onsemi SMUN5335DW1T1GRoHS

Manufacturer
MPN
SMUN5335DW1T1G
LCSC Part #
C894412
Packaging
SC-88
Customer #
Key Attributes
80 1 NPN Pre-Biased, 1 PNP Pre-Biased 187mW 100mA 50V SC-88 Bipolar Transistor Arrays, Pre-Biased RoHS
Datasheetpdf icononsemi SMUN5335DW1T1G
In-Stock: 45
45 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.3122$ 1.56
50+$ 0.256$ 12.80
150+$ 0.2319$ 34.79
500+$ 0.2019$ 100.95
3,000+$ 0.1885$ 565.50
6,000+$ 0.1805$ 1083.00
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased
Manufactureronsemi
PackagingSC-88
Current - Collector Cutoff100nA
DC Current Gain80
Vce Saturation(VCE(sat))250mV
typeNPN+PNP
Output Voltage(VO(on))200mV
Input Resistor2.2kΩ
Resistor Ratio0.047
Number1 NPN Pre-Biased, 1 PNP Pre-Biased
Pd - Power Dissipation187mW
Input Voltage (VI(on)@Ic,Vce)800mV@5mA,200mV
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V
Operating Temperature-55℃~+150℃

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base - emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

Features

AI Translation
  • Simplifies Circuit Design
  • Reduces Board Space
  • Reduces Component Count
  • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC - Q101 Qualified and PPAP Capable
  • These Devices are Pb - Free, Halogen Free/BFR Free and are RoHS Compliant