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onsemi SBC846BPDW1T2GRoHS

Manufacturer
MPN
SBC846BPDW1T2G
LCSC Part #
C894278
Packaging
SOT-363
Customer #
Key Attributes
TRANS NPN+PNP 65V 100mA SOT-363
Datasheetpdf icononsemi SBC846BPDW1T2G
In-Stock: 75
75 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.3641$ 1.82
50+$ 0.2898$ 14.49
150+$ 0.2579$ 38.69
500+$ 0.2181$ 109.05
3,000+$ 0.2004$ 601.20
6,000+$ 0.1898$ 1138.80
Standard Packaging3000/Full Reel
Better price for more quantity?
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays
Manufactureronsemi
PackagingSOT-363
Current - Collector Cutoff15nA
DC Current Gain200
Collector - Emitter Voltage VCEO65V
Pd - Power Dissipation380mW
Emitter-Base Voltage VEBO6V
Transition frequency(fT)100MHz
typeNPN+PNP
Vce Saturation(VCE(sat))600mV
Number1 NPN + 1 PNP
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications.

Features

AI Translation
  • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant