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onsemi MBT3946DW1T2GRoHS

Manufacturer
MPN
MBT3946DW1T2G
LCSC Part #
C891420
Packaging
SC-88
Customer #
Key Attributes
TRANS NPN+PNP 40V 200mA SC-88
Datasheetpdf icononsemi MBT3946DW1T2G
In-Stock: 375
375 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.121$ 0.61
50+$ 0.0999$ 5.00
150+$ 0.0894$ 13.41
500+$ 0.0816$ 40.80
3,000+$ 0.0753$ 225.90
6,000+$ 0.0721$ 432.60
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays
Manufactureronsemi
PackagingSC-88
Current - Collector Cutoff50nA
Pd - Power Dissipation150mW
DC Current Gain100
Collector - Emitter Voltage VCEO40V
Transition frequency(fT)300MHz
Vce Saturation(VCE(sat))200mV
typeNPN+PNP
Number1 NPN + 1 PNP
Current - Collector(Ic)200mA
Operating Temperature-55℃~+150℃

Introduction

AI Translation

The MBT3946DW1T1G device is a spin-off of our popular SOT−23/SOT−323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363−6 surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium.

Features

AI Translation
  • hFE, 100−300
  • Low VCE(sat), ≤0.4 V
  • Simplifies Circuit Design
  • Reduces Board Space
  • Reduces Component Count
  • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
  • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant