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onsemi FDMS0309AS product image
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onsemi FDMS0309ASRoHS

Manufacturer
onsemi
MPN
FDMS0309AS
LCSC Part #
C891038
Packaging
Power-56-8
Customer #
Key Attributes
50W 30V 49A 1.6V 3.5mΩ@10V 1 N-channel N-Channel Power-56-8 Single FETs, MOSFETs RoHS
Datasheetpdf icononsemi FDMS0309AS
In-Stock: 50
50 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.3793$ 1.38
10+$ 1.3477$ 13.48
30+$ 1.3272$ 39.82
100+$ 1.3067$ 130.67
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingPower-56-8
Output Capacitance(Coss)815pF
Pd - Power Dissipation50W
Configuration-
Drain to Source Voltage30V
Current - Continuous Drain(Id)49A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
RDS(on)3.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)85pF
Number1 N-channel
Input Capacitance(Ciss)2.255nF
Gate Charge(Qg)34nC
Vgs±20V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

FDMS0309AS is designed to minimize losses in power conversion applications. Combining advances in silicon and packaging technologies, it achieves the lowest on-resistance rDS(on) while maintaining excellent switching performance. The device also benefits from an efficient monolithic Schottky body diode.

Features

AI Translation
  • Maximum on-resistance rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 21 A
  • Maximum on-resistance rDS(on) = 4.3 mΩ at VGS = 4.5 V, ID = 19 A
  • Advanced packaging combined with silicon technology for low rDS(on) and high efficiency
  • SyncFET™ Schottky body diode
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS compliant

Applications

AI Translation
  • Synchronous rectifier for DC/DC converters
  • Notebook Vcore/GPU low-side switch
  • Network point-of-load low-side switch
  • Telecom secondary-side rectification