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EDA ModelsEasyEDA
onsemi FDMA1024NZ
| Manufacturer | |
| MPN | FDMA1024NZ |
| LCSC Part # | C890891 |
| Packaging | MicroFET-6(2x2) |
| Customer # | |
| Key Attributes | 20V 5A 54mΩ@4.5V 1.4W 1V 2 N-Channel MicroFET-6(2x2) FET, MOSFET Arrays RoHS |
| Datasheet | onsemi FDMA1024NZ |
| RoHS Compliance | 4 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | MicroFET-6(2x2) | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 70pF | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 5A | |
| RDS(on) | 54mΩ@4.5V | |
| Pd - Power Dissipation | 1.4W | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel | |
| Configuration | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 500pF | |
| Gate Charge(Qg) | 7.3nC@4.5V | |
| Vgs | ±8V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | MicroFET-6(2x2) | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 70pF | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 5A | |
| RDS(on) | 54mΩ@4.5V | |
| Pd - Power Dissipation | 1.4W |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel | |
| Configuration | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 500pF | |
| Gate Charge(Qg) | 7.3nC@4.5V | |
| Vgs | ±8V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This device is designed to meet the dual-switch requirements in cellular phones and other ultra-portable applications, offering a single-package solution. It features two independent N-channel MOSFETs with low on-resistance to minimize conduction losses. The MicroFET 2X2 package delivers excellent thermal performance for its physical size, making it well-suited for linear-mode applications.
Features
AI Translation
- Max rDS(on) = 54 mΩ at VGS = 4.5 V, ID = 5.0 A
- Max rDS(on) = 66 mΩ at VGS = 2.5 V, ID = 4.2 A
- Max rDS(on) = 82 mΩ at VGS = 1.8 V, ID = 2.3 A
- Max rDS(on) = 114 mΩ at VGS = 1.5 V, ID = 2.0 A
- HBM ESD protection rating = 1.6 kV
- New MicroFET 2x2 mm package, low profile, max height 0.8 mm
- RoHS compliant
- Halogen-free and antimony oxide-free
Applications
AI Translation
- Baseband switch
- Load switch
- DC-DC conversion
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.6986 | $ 0.70 |
| 10+ | $ 0.684 | $ 6.84 |
| 30+ | $ 0.6726 | $ 20.18 |
| 100+ | $ 0.6629 | $ 66.29 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | MicroFET-6(2x2) | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 70pF | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 5A | |
| RDS(on) | 54mΩ@4.5V | |
| Pd - Power Dissipation | 1.4W | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel | |
| Configuration | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 500pF | |
| Gate Charge(Qg) | 7.3nC@4.5V | |
| Vgs | ±8V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | MicroFET-6(2x2) | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 70pF | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 5A | |
| RDS(on) | 54mΩ@4.5V | |
| Pd - Power Dissipation | 1.4W |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel | |
| Configuration | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 500pF | |
| Gate Charge(Qg) | 7.3nC@4.5V | |
| Vgs | ±8V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This device is designed to meet the dual-switch requirements in cellular phones and other ultra-portable applications, offering a single-package solution. It features two independent N-channel MOSFETs with low on-resistance to minimize conduction losses. The MicroFET 2X2 package delivers excellent thermal performance for its physical size, making it well-suited for linear-mode applications.
Features
AI Translation
- Max rDS(on) = 54 mΩ at VGS = 4.5 V, ID = 5.0 A
- Max rDS(on) = 66 mΩ at VGS = 2.5 V, ID = 4.2 A
- Max rDS(on) = 82 mΩ at VGS = 1.8 V, ID = 2.3 A
- Max rDS(on) = 114 mΩ at VGS = 1.5 V, ID = 2.0 A
- HBM ESD protection rating = 1.6 kV
- New MicroFET 2x2 mm package, low profile, max height 0.8 mm
- RoHS compliant
- Halogen-free and antimony oxide-free
Applications
AI Translation
- Baseband switch
- Load switch
- DC-DC conversion
C890891 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| WSD2054DN22 | Winsok Semicon | DFN2X2-6L | 35 | $0.2667 $0.2963 | ||
| DMN2025UFDB-7 | DIODES | UDFN2020-6 | 2,015 | $ 0.4138 | ||
| DMN3055LFDB-7 | DIODES | UDFN2020-6 | 1,455 | $ 0.3672 | ||
| DMN2025UFDB-13 | DIODES | UDFN2020-6 | 0 | $ 0.293 | ||
| PJQ2800_R1_00001 | PANJIT | DFN2020-6L | 0 | $ 0.4772 | ||
| SDW2065 | Shikues | DFN-6(2x2) | 0 | $0.0627 $0.0659 | ||
| TSM250N02DCQ RFG | Taiwan Semiconductor | TDFN-6(2x2) | 0 | $ 2.3989 | ||
| DMN3032LFDBWQ-7 | DIODES | UDFN2020-6 | 0 | $ 0.8985 | ||
| DMT3020UFDB-7 | DIODES | UDFN2020-6 | 0 | $ 0.3974 | ||
| CSD85301Q2T | TI | WDFN-6-EP(2x2) | 0 | $ 1.335 |