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onsemi CAT25128YI-GT3RoHS

Manufacturer
MPN
CAT25128YI-GT3
LCSC Part #
C890371
Packaging
TSSOP-8
Customer #
Key Attributes
1.8V~5.5V 128Kbit 20MHz SPI TSSOP-8 Memory (ICs) RoHS
Datasheetpdf icononsemi CAT25128YI-GT3
In-Stock: 44
44 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.6455$ 0.65
10+$ 0.631$ 6.31
30+$ 0.6213$ 18.64
100+$ 0.6117$ 61.17
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory (ICs)
Manufactureronsemi
PackagingTSSOP-8
Voltage - Supply1.8V~5.5V
Memory Size128Kbit
Operating temperature-40℃~+85℃
Clock Frequency20MHz
FeaturesHardware write protection function;Built-in power-on reset (POR);Built-in write enable latch (WEL);Built-in error correction code (ECC) function;Software write protection function
Data Retention - TDR (Year)100 Years
Write Cycle Time(tWC)5ms
Write Cycle Endurance1,000,000 cycles
InterfaceSPI

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The CAT25128 is a 128−Kb Serial CMOS EEPROM device internally organized as 16Kx8 bits. This features a 64−byte page write buffer and supports the Serial Peripheral Interface (SPI) protocol. The device is enabled through a Chip Select (CS (overline)) input. In addition, the required bus signals are clock input (SCK), data input (SI) and data output (SO) lines. The HOLD input may be used to pause any serial communication with the CAT25128 device. The device features software and hardware write protection, including partial as well as full array protection. On−Chip ECC (Error Correction Code) makes the device suitable for high reliability applications.

Features

AI Translation
  • 20 MHz SPI Compatible
  • 1.8 V to 5.5 V Supply Voltage Range
  • SPI Modes (0,0) & (1,1)
  • 64−byte Page Write Buffer
  • Additional Identification Page with Permanent Write Protection
  • Self−timed Write Cycle
  • Hardware and Software Protection
  • Block Write Protection − Protect 1/4, 1/2 or Entire EEPROM Array
  • Low Power CMOS Technology
  • 1,000,000 Program/Erase Cycles
  • 100 Year Data Retention
  • Industrial and Extended Temperature Range
  • 8−lead SOIC, TSSOP and 8−pad, UDFN Packages
  • This Device is Pb−Free, Halogen Free/BFR Free, and RoHS Compliant