TOSHIBA TBD62783AFG(Z,EL)

Manufacturer	TOSHIBA
MPN	TBD62783AFG(Z,EL)
LCSC Part #	C840444
Packaging	SOP-18-300mil
Customer #
Key Attributes	8channel source type DMos transistor array
Datasheet	TOSHIBA TBD62783AFG(Z,EL)

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays
Manufacturer	TOSHIBA
Packaging	SOP-18-300mil
Output Leakage Current(Icex)	-
Collector - Emitter Voltage VCEO	-
Input Capacitiance(Ci)	-
Reverse Leakage Current (Ir)	1uA
number of channels	8
Input Current(on)	0.1mA
type	MOS
Vce Saturation(VCE(sat))	1.14V
Voltage - Forward(Vf)	2V
Voltage - Input(Max)	30V
Input Current(off)	1uA
Current - Collector(Ic)	400mA
Operating Temperature	-40℃~+85℃

AI Translation

TBD62783A series are DMOS transistor array with 8 circuits. It has a clamp diode for switching inductive loads built-in in each output.

AI Translation

8 circuits built-in
High voltage : VoUT = 50 V (MAX)
High current : |Iour| = -500 mA (MAX for each channel)
Input voltage(output on) : 2.0 V (MIN)
Input voltage(output off) : 0.6 V (MAX)
Package : PG type P-DIP18-300-2.54-001, FG type SOP18-P-375-1.27, FNG type SSOP18-P-225-0.65, FWG type P-SOP18-0812-1.27-001

In-Stock: 5,184

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Qty	Unit Price	Total Amount
1+	$ 1.0622	$ 1.06
10+	$ 0.8523	$ 8.52
30+	$ 0.7466	$ 22.40
100+	$ 0.6425	$ 64.25
500+	$ 0.5596	$ 279.80
1,000+	$ 0.527	$ 527.00
Standard Packaging1000/Full Reel

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