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GOFORD G33N03D3 product image
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GOFORD G33N03D3RoHS

Manufacturer
GOFORDAsian Brands
MPN
G33N03D3
LCSC Part #
C840053
Packaging
DFN3.3x3.3-8L
Customer #
Key Attributes
MOSFET N-CH ARR 30V 33A DFN3.3x3.3-8L
Datasheetpdf iconGOFORD G33N03D3
In-Stock: 2,890
2,890 In stock, ships now
Not recommended for new designs
Once stock is depleted, this item will be marked as "Out of Stock."
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Minimum: 5Multiple: 5Sales Unit: Piece
QtyUnit PriceTotal Amount
5+$ 0.1725$ 0.86
50+$ 0.136$ 6.80
150+$ 0.1204$ 18.06
500+$ 0.1009$ 50.45
2,500+$ 0.0897$ 224.25
5,000+$ 0.0844$ 422.00
Standard Packaging5000/Full Reel

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerGOFORD
PackagingDFN3.3x3.3-8L
Current - Continuous Drain(Id)28A
Pd - Power Dissipation20W
RDS(on)9mΩ@10V
Gate Threshold Voltage (Vgs(th))1.4V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)134pF
Number2 N-Channel
Input Capacitance(Ciss)905pF
Gate Charge(Qg)16nC
Vgs±20V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)150pF
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Introduction

AI Translation

G33N03D3 utilizes advanced trench technology to deliver excellent on-resistance RDS(ON) and low gate charge. It is suitable for a wide range of applications.

Features

AI Translation
  • Drain-Source Voltage VDS: 30V
  • Drain Current ID (VGS = 10V): 28A
  • On-Resistance RDS(ON) (VGS = 10V): < 11mΩ
  • On-Resistance RDS(ON) (VGS = 4.5V): < 14mΩ
  • 100% Avalanche Tested
  • RoHS Compliant

Applications

AI Translation
  • Power Switch - DC/DC Converter