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onsemi FDC6327CRoHS

Manufacturer
onsemi
MPN
FDC6327C
LCSC Part #
C83567
Packaging
SuperSOT-6
Customer #
Key Attributes
MOSFET N-CH+P-CH ARR 20V SuperSOT-6
Datasheetpdf icononsemi FDC6327C
In-Stock: 420
420 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.473$ 2.37
50+$ 0.3728$ 18.64
150+$ 0.3298$ 49.47
500+$ 0.2763$ 138.15
3,000+$ 0.2524$ 757.20
6,000+$ 0.2381$ 1428.60
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
Manufactureronsemi
PackagingSuperSOT-6
Current - Continuous Drain(Id)2.7A;1.9A
RDS(on)69mΩ@4.5V
Pd - Power Dissipation900mW
Gate Threshold Voltage (Vgs(th))400mV
Drain to Source Voltage20V
Reverse Transfer Capacitance (Crss@Vds)35pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)325pF
Gate Charge(Qg)3.25nC@4.5V
Operating Temperature-55℃~+150℃
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

These N & P-Channel 2.5V specified MOSFETs are produced using advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

Features

AI Translation
  • N-Channel 2.7A, 20V. RDS(on)=0.08Ω @ VGS=4.5V RDS(on)=0.12Ω @ ΔVGS=2.5V
  • P-Channel -1.3A, -20V. RDS(on)=0.17Ω @ VGS=-4.5V RDS(on)=0.25Ω @ VGS=-2.5V
  • Fast switching speed.
  • Low gate charge.
  • High performance trench technology for extremely low RDS(ON).
  • SuperSOTTM-6 package: small footprint (72% smaller than SO-8); low profile (1mm thick).

Applications

AI Translation
  • DC/DC converter
  • Load switch
  • Motor driving