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VBsemi Elec SI7336ADP-T1-GE3-VB product image
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VBsemi Elec SI7336ADP-T1-GE3-VBRoHS

Manufacturer
VBsemi ElecAsian Brands
MPN
SI7336ADP-T1-GE3-VB
LCSC Part #
C7569055
Packaging
DFN5x6-8
Customer #
Key Attributes
MOSFET N-CH 30V 120A DFN5x6-8
Datasheetpdf iconVBsemi Elec SI7336ADP-T1-GE3-VB
In-Stock: 4
4 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.832$ 0.7072$ 0.71
10+$ 0.6796$ 0.5777$ 5.78
30+$ 0.6034$ 0.5129$ 15.39
100+$ 0.5288$ 0.4495$ 44.95
500+$ 0.4303$ 0.3658$ 182.90
1,000+$ 0.4081$ 0.3469$ 346.90
Standard Packaging5000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVBsemi Elec
PackagingDFN5x6-8
Operating Temperature-55℃~+175℃
Drain to Source Voltage30V
Output Capacitance(Coss)1.025nF
Current - Continuous Drain(Id)120A
Gate Threshold Voltage (Vgs(th))1.79V
Reverse Transfer Capacitance (Crss@Vds)970pF
RDS(on)3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.2nF
Gate Charge(Qg)71nC@10V
TypeN-Channel
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Features

AI Translation
  • Trench power MOSFET
  • 100% gate resistance (Rg) and unclamped inductive switching (UIS) tested

Applications

AI Translation
  • Notebook Core - Voltage Regulator Module (VRM) / Point-of-Load (POL) Power Supply