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ElecSuper NTK3134NT1G-ESRoHS

Manufacturer
ElecSuperAsian Brands
MPN
NTK3134NT1G-ES
LCSC Part #
C7527994
Packaging
SOT-723
Customer #
Key Attributes
MOSFET N-CH 20V 900mA SOT-723
Datasheetpdf iconElecSuper NTK3134NT1G-ES
In-Stock: 10,640
10,640 In stock, ships now
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QtyUnit PriceTotal Amount
20+$ 0.0383$ 0.77
200+$ 0.0317$ 6.34
600+$ 0.028$ 16.80
2,000+$ 0.0258$ 51.60
8,000+$ 0.022$ 176.00
16,000+$ 0.021$ 336.00
Standard Packaging8000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerElecSuper
PackagingSOT-723
Drain to Source Voltage20V
Output Capacitance(Coss)22pF
Current - Continuous Drain(Id)900mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))650mV
Pd - Power Dissipation230mW
Reverse Transfer Capacitance (Crss@Vds)12pF
RDS(on)150mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)60pF
Gate Charge(Qg)1nC@4.5V
TypeN-Channel
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Additional Information

TypeDetails
Minimum20
Multiple20
Standard Packaging8000
Sales UnitPiece

Introduction

AI Translation

NTK3134NT1G-ES is an N-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design, it delivers excellent RDS(ON) with low gate charge. The device is suitable for DC-DC conversion, power switching, and charging circuits. The standard product NTK3134NT1G-ES is lead-free.

Features

AI Translation
  • 20V, RDS(ON) = 150 mΩ (typical) at VGS = 4.5V
  • RDS(ON) = 200 mΩ (typical) at VGS = 2.5V
  • High-density cell design for low RDS(ON)
  • Material: Halogen-free
  • Robust and durable
  • Avalanche-rated
  • Low leakage current

Applications

AI Translation
  • PWM applications
  • Load switching
  • Power management for portable/desktop PCs
  • DC/DC conversion