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UMW FDS6676AS(UMW) product image
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UMW FDS6676AS(UMW)RoHS

Manufacturer
UMWAsian Brands
MPN
FDS6676AS(UMW)
LCSC Part #
C7499386
Packaging
SOP-8
Customer #
Key Attributes
MOSFET N-CH 30V 14.5A SOP-8
Datasheetpdf iconUMW FDS6676AS(UMW)
In-Stock: 2,850
2,850 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1013$ 0.51
50+$ 0.0887$ 4.44
150+$ 0.0825$ 12.38
500+$ 0.0778$ 38.90
3,000+$ 0.074$ 222.00
6,000+$ 0.0721$ 432.60
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerUMW
PackagingSOP-8
Drain to Source Voltage30V
Output Capacitance(Coss)710pF
Current - Continuous Drain(Id)14.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)270pF
RDS(on)4.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.51nF
Gate Charge(Qg)45nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

FDS6676AS is designed to replace individual SO-8 MOSFETs and Schottky diodes in synchronous DC-DC power supplies. This 30V MOSFET is engineered to maximize power conversion efficiency, offering low RDS(ON) and low gate charge.

Features

AI Translation
  • Drain-source voltage VDS = 30V
  • Drain current ID = 14.5A
  • On-resistance RDS(ON) < 6mΩ (at VGS = 10V)
  • On-resistance RDS(ON) < 7.25mΩ (at VGS = 4.5V)
  • High power and current handling capability
  • Advanced trench technology for ultra-low RDS(ON) and fast switching
  • RoHS compliant
  • Integrated synchronous FET Schottky body diode
  • Low gate charge (typical 45nC)