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TECH PUBLIC NVMFS5113PLT1G-TP product image
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TECH PUBLIC NVMFS5113PLT1G-TPRoHS

Manufacturer
TECH PUBLICAsian Brands
MPN
NVMFS5113PLT1G-TP
LCSC Part #
C7472882
Packaging
DFN5x6-8L
Customer #
Key Attributes
MOSFET 60V 65A DFN5x6-8L
Datasheetpdf iconTECH PUBLIC NVMFS5113PLT1G-TP
In-Stock: 1,463
1,463 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.8039$ 0.80
10+$ 0.7216$ 7.22
30+$ 0.6758$ 20.27
100+$ 0.6235$ 62.35
500+$ 0.6014$ 300.70
1,000+$ 0.5903$ 590.30
Standard Packaging5000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTECH PUBLIC
PackagingDFN5x6-8L
Drain to Source Voltage60V
Current - Continuous Drain(Id)65A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)265pF
RDS(on)13mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)5.604nF
Gate Charge(Qg)62.1nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

This power MOSFET is designed to withstand high energy in avalanche and commutation modes. The device is optimized for low-voltage, high-speed switching applications in power supplies, converters, and motor drives, making it particularly suitable for bridge circuits with stringent requirements on diode recovery speed and commutation SOA, while providing additional safety margin against inadvertent voltage transients.

Features

AI Translation
  • VDS(V) = -60 V
  • ID = -12 A (VGS = -10 V)
  • RDS(ON) = 150 mΩ (VGS = -10 V)
  • Specified avalanche energy
  • Specified IDSS and VDS(ON) at high temperature
  • Designed for low-voltage, high-speed switching applications with high energy capability in avalanche and commutation modes

Applications

AI Translation
  • LoadSwitch
  • Power management in portable/desktop PCs
  • DC/DC conversion