VBsemi Elec IPD70P04P4L-08-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | IPD70P04P4L-08-VB |
| LCSC Part # | C7463449 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET P-CH 40V 90A TO-252 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 852pF | |
| Current - Continuous Drain(Id) | 90A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 136W | |
| Reverse Transfer Capacitance (Crss@Vds) | 681pF | |
| RDS(on) | 6.8mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 5.339nF | |
| Gate Charge(Qg) | 103nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Trench power MOSFET
- Low thermal resistance package
- 100% gate resistance (Rg) and unclamped inductive switching (UIS) tested
- RoHS compliant
- Halogen-free
Applications
AI Translation
- Primary-side switch
In-Stock: 33
33 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.1432$ 0.9718 | $ 0.97 |
| 10+ | $ 0.9574$ 0.8138 | $ 8.14 |
| 30+ | $ 0.8558$ 0.7275 | $ 21.83 |
| 100+ | $ 0.7415$ 0.6303 | $ 63.03 |
| 500+ | $ 0.6335$ 0.5385 | $ 269.25 |
| 1,000+ | $ 0.6097$ 0.5183 | $ 518.30 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 852pF | |
| Current - Continuous Drain(Id) | 90A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 136W | |
| Reverse Transfer Capacitance (Crss@Vds) | 681pF | |
| RDS(on) | 6.8mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 5.339nF | |
| Gate Charge(Qg) | 103nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Trench power MOSFET
- Low thermal resistance package
- 100% gate resistance (Rg) and unclamped inductive switching (UIS) tested
- RoHS compliant
- Halogen-free
Applications
AI Translation
- Primary-side switch
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



