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EDA-ModelleEasyEDA
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | HL | |
| Verp. | TO-252-3L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 100A | |
| Ciss-Input Capacitance | 3.2nF | |
| Pd - Power Dissipation | 88W | |
| Reverse Transfer Capacitance (Crss) | 445pF | |
| RDS(on) | 2.7mΩ | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 48nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | HL | |
| Verp. | TO-252-3L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 100A | |
| Ciss-Input Capacitance | 3.2nF |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 88W | |
| Reverse Transfer Capacitance (Crss) | 445pF | |
| RDS(on) | 2.7mΩ | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 48nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | HL | |
| Verp. | TO-252-3L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 100A | |
| Ciss-Input Capacitance | 3.2nF | |
| Pd - Power Dissipation | 88W | |
| Reverse Transfer Capacitance (Crss) | 445pF | |
| RDS(on) | 2.7mΩ | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 48nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | HL | |
| Verp. | TO-252-3L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 100A | |
| Ciss-Input Capacitance | 3.2nF |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 88W | |
| Reverse Transfer Capacitance (Crss) | 445pF | |
| RDS(on) | 2.7mΩ | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 48nC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
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C7437082 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |