VBsemi Elec IRF7468TRPBF-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | IRF7468TRPBF-VB |
| LCSC Part # | C7429015 |
| Packaging | SO-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH 40V 10A SO-8 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | SO-8 | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 260pF | |
| Current - Continuous Drain(Id) | 10A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF | |
| RDS(on) | 14mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2nF | |
| Gate Charge(Qg) | 15nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Halogen-free per IEC 61249-2-21
- Trench power MOSFET
- 100% gate resistance (Rg) tested
- 100% unclamped inductive switching (UIS) tested
- RoHS compliant per directive 2002/95/EC
Applications
AI Translation
- Synchronous rectification
- Point-of-load (POL), intermediate bus converter (IBC)
- Secondary side
- N-channel MOSFET
In-Stock: 47
47 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.4398$ 0.4179 | $ 0.42 |
| 10+ | $ 0.3462$ 0.3289 | $ 3.29 |
| 30+ | $ 0.3049$ 0.2897 | $ 8.69 |
| 100+ | $ 0.2557$ 0.2430 | $ 24.30 |
| 500+ | $ 0.2319$ 0.2204 | $ 110.20 |
| 1,000+ | $ 0.2192$ 0.2083 | $ 208.30 |
Standard Packaging4000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | SO-8 | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 260pF | |
| Current - Continuous Drain(Id) | 10A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF | |
| RDS(on) | 14mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2nF | |
| Gate Charge(Qg) | 15nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Halogen-free per IEC 61249-2-21
- Trench power MOSFET
- 100% gate resistance (Rg) tested
- 100% unclamped inductive switching (UIS) tested
- RoHS compliant per directive 2002/95/EC
Applications
AI Translation
- Synchronous rectification
- Point-of-load (POL), intermediate bus converter (IBC)
- Secondary side
- N-channel MOSFET
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



