Alliance Memory AS6C8016B-55ZIN

Fast access time : 45/55ns Low power consumption: Operating current : 12mA /10mA(TYP.) Standby current : 2.5μA (TYP.) Single 2.7V~3.6V power supply All inputs and outputs TTL compatible Fully static operation Tri-state output Data byte control : LB# (DQ0 ~ DQ7) UB# (DQ8 ~ DQ15) Data retention voltage : 1.5V (MIN.) Package : 44-pin 400mil TSOP II

The AS6C8016B is a 8,388,608-bit low power CMOS static random access memory organized as 524,288 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature.

The AS6C8016B is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application.

The AS6C8016B operates from a single power supply of 2.7V~3.6V and all inputs and outputs are fully TTL compatible

• Fast access time : 45/55ns
• Low power consumption: Operating current : 12mA /10mA(TYP.) Standby current : 2.5μA (TYP.)
• Single 2.7V~3.6V power supply
• All inputs and outputs TTL compatible
• Fully static operation
• Tri-state output
• Data byte control : LB# (DQ0 ~ DQ7) UB# (DQ8 ~ DQ15)
• Data retention voltage : 1.5V (MIN.)