DIODES DMN65D8LT-7
| Manufacturer | |
| MPN | DMN65D8LT-7 |
| LCSC Part # | C7172036 |
| Packaging | SOT-523 |
| Customer # | |
| Key Attributes | 60V 210mA 1.2V 300mW 2.2Ω@5V 1 N-channel SOT-523 Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | SOT-523 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 210mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Pd - Power Dissipation | 300mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.8pF | |
| RDS(on) | 2.2Ω@5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 24pF | |
| Gate Charge(Qg) | 400pC@10V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Low on-resistance: RDS(ON)
- Low gate threshold voltage
- Low input capacitance
- Fast switching speed
- Low input/output leakage current
- ESD protection up to 1kV
- Fully lead-free and fully RoHS compliant
- Halogen-free and antimony-free, eco-friendly device
Applications
AI Translation
- Motor Control - Power Management Functions
In-Stock: 70
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Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0513 | $ 0.51 |
| 100+ | $ 0.0411 | $ 4.11 |
| 300+ | $ 0.036 | $ 10.80 |
| 3,000+ | $ 0.0321 | $ 96.30 |
| 6,000+ | $ 0.029 | $ 174.00 |
| 9,000+ | $ 0.0275 | $ 247.50 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | SOT-523 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 210mA | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Pd - Power Dissipation | 300mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.8pF | |
| RDS(on) | 2.2Ω@5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 24pF | |
| Gate Charge(Qg) | 400pC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Low on-resistance: RDS(ON)
- Low gate threshold voltage
- Low input capacitance
- Fast switching speed
- Low input/output leakage current
- ESD protection up to 1kV
- Fully lead-free and fully RoHS compliant
- Halogen-free and antimony-free, eco-friendly device
Applications
AI Translation
- Motor Control - Power Management Functions
C7172036 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



