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onsemi NTJD4105CT2GRoHS

Manufacturer
onsemi
MPN
NTJD4105CT2G
LCSC Part #
C703687
Packaging
SOT-363
Customer #
Key Attributes
375mΩ@4.5V 270mW 1.5V 1 N-Channel + 1 P-Channel SOT-363 FET, MOSFET Arrays RoHS
Datasheetpdf icononsemi NTJD4105CT2G
In-Stock: 645
645 In stock, ships now
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QtyUnit PriceTotal Amount
5+$ 0.1804$ 0.90
50+$ 0.1776$ 8.88
150+$ 0.1757$ 26.36
500+$ 0.1738$ 86.90
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
Manufactureronsemi
PackagingSOT-363
Current - Continuous Drain(Id)630mA;775mA
RDS(on)375mΩ@4.5V
Pd - Power Dissipation270mW
Gate Threshold Voltage (Vgs(th))1.5V
Drain to Source Voltage20V;8V
Reverse Transfer Capacitance (Crss@Vds)-
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)46pF
Gate Charge(Qg)3nC@4.5V
Operating Temperature-55℃~+150℃
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Features

AI Translation
  • Complementary N-channel and P-channel devices
  • Advanced -8.0V trench structure for low R<sub>DS(on)</sub> performance
  • Protected gate — ESD rating: Class 1
  • SC-88 package, small footprint (2 x 2 mm)
  • Available in lead-free package

Applications

AI Translation
  • DC-DC conversion
  • Load/power switch
  • Single or dual-cell Li-ion battery powered devices
  • Mobile phones, MP3 players, digital cameras, PDAs