HUASHUO AO3400A
| Manufacturer | HUASHUOAsian Brands |
| MPN | AO3400A |
| LCSC Part # | C700953 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET N-CH 30V 5.2A SOT-23 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 5.2A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 850mV | |
| Pd - Power Dissipation | 1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 61pF | |
| RDS(on) | 27mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 927pF | |
| Gate Charge(Qg) | 11.7nC@4.5V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 20 |
| Multiple | 20 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The AO3400A is the high cell density trenched Nch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The AO3400A meet the RoHS and Green Product requirement with full function reliability approved. Green Device Available
Features
AI Translation
- Super Low Gate Charge
- Excellent Cdv/dt effect decline
- Advanced high cell density Trench technology
In-Stock: 43,240
43,240 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 20+ | $ 0.0411 | $ 0.82 |
| 200+ | $ 0.0327 | $ 6.54 |
| 600+ | $ 0.0285 | $ 17.10 |
| 3,000+ | $ 0.0221 | $ 66.30 |
| 9,000+ | $ 0.0195 | $ 175.50 |
| 21,000+ | $ 0.0182 | $ 382.20 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 5.2A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 850mV | |
| Pd - Power Dissipation | 1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 61pF | |
| RDS(on) | 27mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 927pF | |
| Gate Charge(Qg) | 11.7nC@4.5V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 20 |
| Multiple | 20 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The AO3400A is the high cell density trenched Nch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The AO3400A meet the RoHS and Green Product requirement with full function reliability approved. Green Device Available
Features
AI Translation
- Super Low Gate Charge
- Excellent Cdv/dt effect decline
- Advanced high cell density Trench technology
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



