Wuxi China Resources Huajing Microelectronics BT15T120CNR
| Manufacturer | Wuxi China Resources Huajing MicroelectronicsAsian Brands |
| MPN | BT15T120CNR |
| LCSC Part # | C696826 |
| Packaging | TO-3PN |
| Customer # | |
| Key Attributes | 156W 15A 1.2kV FS (Field Stop) TO-3PN Single IGBTs |
| Datasheet | Wuxi China Resources Huajing Microelectronics BT15T120CNR |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | Wuxi China Resources Huajing Microelectronics | |
| Packaging | TO-3PN | |
| Td(off) | 107ns | |
| Pd - Power Dissipation | 156W | |
| Td(on) | 14ns | |
| Current - Collector(Ic) | 15A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 25pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V | |
| Operating Temperature | -55℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 1.95V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 700uJ | |
| Turn-On Energy (Eon) | 430uJ | |
| Input Capacitance(Cies) | 1.513nF | |
| Output Capacitance(Coes) | 35pF | |
| Gate Charge(Qg) | 81.5nC@960V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | Wuxi China Resources Huajing Microelectronics | |
| Packaging | TO-3PN | |
| Td(off) | 107ns | |
| Pd - Power Dissipation | 156W | |
| Td(on) | 14ns | |
| Current - Collector(Ic) | 15A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 25pF | |
| IGBT Type | FS (Field Stop) |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V | |
| Operating Temperature | -55℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 1.95V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 700uJ | |
| Turn-On Energy (Eon) | 430uJ | |
| Input Capacitance(Cies) | 1.513nF | |
| Output Capacitance(Coes) | 35pF | |
| Gate Charge(Qg) | 81.5nC@960V |
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 1.6425 | $ 1.64 |
| 10+ | $ 1.4378 | $ 14.38 |
| 25+ | $ 1.2965 | $ 32.41 |
| 100+ | $ 1.1698 | $ 116.98 |
| 500+ | $ 1.1129 | $ 556.45 |
| 1,000+ | $ 1.0885 | $ 1088.50 |
Standard Packaging25/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | Wuxi China Resources Huajing Microelectronics | |
| Packaging | TO-3PN | |
| Td(off) | 107ns | |
| Pd - Power Dissipation | 156W | |
| Td(on) | 14ns | |
| Current - Collector(Ic) | 15A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 25pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V | |
| Operating Temperature | -55℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 1.95V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 700uJ | |
| Turn-On Energy (Eon) | 430uJ | |
| Input Capacitance(Cies) | 1.513nF | |
| Output Capacitance(Coes) | 35pF | |
| Gate Charge(Qg) | 81.5nC@960V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | Wuxi China Resources Huajing Microelectronics | |
| Packaging | TO-3PN | |
| Td(off) | 107ns | |
| Pd - Power Dissipation | 156W | |
| Td(on) | 14ns | |
| Current - Collector(Ic) | 15A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Reverse Transfer Capacitance (Cres) | 25pF | |
| IGBT Type | FS (Field Stop) |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.8V | |
| Operating Temperature | -55℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 1.95V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 700uJ | |
| Turn-On Energy (Eon) | 430uJ | |
| Input Capacitance(Cies) | 1.513nF | |
| Output Capacitance(Coes) | 35pF | |
| Gate Charge(Qg) | 81.5nC@960V |
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C696826 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| ECCN | |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |



