DIODES DMN2028UVT-7
| Manufacturer | |
| MPN | DMN2028UVT-7 |
| LCSC Part # | C6832187 |
| Packaging | TSOT-26 |
| Customer # | |
| Key Attributes | MOSFET 20V 6.2A TSOT-26 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | TSOT-26 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 6.2A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 1.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 78pF | |
| RDS(on) | 24mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 856pF | |
| Gate Charge(Qg) | 8.3nC@4.5V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This next-generation MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Low input capacitance
- Low on-resistance
- Fast switching speed
- Fully lead-free and fully RoHS compliant
- Halogen and antimony free, "Green" device
Applications
AI Translation
- DC-DC Converter
- Power Management Function
- Backlight Source
In-Stock: 55
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.04 | $ 1.04 |
| 10+ | $ 0.8431 | $ 8.43 |
| 30+ | $ 0.7455 | $ 22.37 |
| 100+ | $ 0.6478 | $ 64.78 |
| 500+ | $ 0.5892 | $ 294.60 |
| 1,000+ | $ 0.5599 | $ 559.90 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | TSOT-26 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 6.2A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 1.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 78pF | |
| RDS(on) | 24mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 856pF | |
| Gate Charge(Qg) | 8.3nC@4.5V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This next-generation MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Low input capacitance
- Low on-resistance
- Fast switching speed
- Fully lead-free and fully RoHS compliant
- Halogen and antimony free, "Green" device
Applications
AI Translation
- DC-DC Converter
- Power Management Function
- Backlight Source
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

