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Modelos EDAEasyEDA
ST STP45N65M5
| Fabricante | |
| N.º de pieza fab. | STP45N65M5 |
| Nº LCSC | C672233 |
| Emb. | TO-220 |
| Número de Cliente | |
| Atrib. clave | MOSFET 650V 35A TO-220 |
| Hoja de Datos | ST STP45N65M5 |
| Cumplimiento RoHS | 1 documentos disponibles |
| Piezas alternativas | 5 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | ST | |
| Emb. | TO-220 | |
| Output Capacitance(Coss) | 82pF | |
| Ciss-Input Capacitance | 3.47nF | |
| Pd - Power Dissipation | 40W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 35A | |
| Reverse Transfer Capacitance (Crss) | 7pF | |
| RDS(on) | 78mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 82nC@10V | |
| Vgs | ±25V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | ST | |
| Emb. | TO-220 | |
| Output Capacitance(Coss) | 82pF | |
| Ciss-Input Capacitance | 3.47nF | |
| Pd - Power Dissipation | 40W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V |
| Tipo | Descripción | |
|---|---|---|
| Current - Continuous Drain(Id) | 35A | |
| Reverse Transfer Capacitance (Crss) | 7pF | |
| RDS(on) | 78mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 82nC@10V | |
| Vgs | ±25V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Características
Traducción por IA
- Worldwide best RDS(on) * area
- Higher VDSS rating and high dv/dt capability
- Excellent switching performance
- 100% avalanche tested
Aplicaciones
Traducción por IA
- Switching applications
Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días
En stock: 1
1 En stock, envío inmediato
Mínimo: 1Múltiplo: 1Unidad de venta: Piece
Añadir a la Lista BOM
| Cant. | Prec. unit. | Importo total |
|---|---|---|
| 1+ | $ 12.729 | $ 12.73 |
| 10+ | $ 11.4634 | $ 114.63 |
| 50+ | $ 10.6917 | $ 534.59 |
| 100+ | $ 10.0451 | $ 1004.51 |
Encapsulado Estándar50/Full Tube | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | ST | |
| Emb. | TO-220 | |
| Output Capacitance(Coss) | 82pF | |
| Ciss-Input Capacitance | 3.47nF | |
| Pd - Power Dissipation | 40W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 35A | |
| Reverse Transfer Capacitance (Crss) | 7pF | |
| RDS(on) | 78mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 82nC@10V | |
| Vgs | ±25V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | ST | |
| Emb. | TO-220 | |
| Output Capacitance(Coss) | 82pF | |
| Ciss-Input Capacitance | 3.47nF | |
| Pd - Power Dissipation | 40W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V |
| Tipo | Descripción | |
|---|---|---|
| Current - Continuous Drain(Id) | 35A | |
| Reverse Transfer Capacitance (Crss) | 7pF | |
| RDS(on) | 78mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 82nC@10V | |
| Vgs | ±25V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Características
Traducción por IA
- Worldwide best RDS(on) * area
- Higher VDSS rating and high dv/dt capability
- Excellent switching performance
- 100% avalanche tested
Aplicaciones
Traducción por IA
- Switching applications
C672233 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Piezas alternativas
| MPN | Fabricante | Tipo alternativo | Empaque | Disponibilidad | Precio unitario | ||
|---|---|---|---|---|---|---|---|
| STP57N65M5 | ST | Similares | TO-220 | 4 | $ 16.21 | ||
| NTP082N65S3HF | onsemi | Similares | TO-220 | 4 | $ 11.7932 | ||
| NTP082N65S3F | onsemi | Similares | TO-220 | 27 | $4.5311 $6.2932 | ||
| WTM40N65AP | WPMtek | Similares | TO-220 | 6 | $ 2.1544 | ||
| NTP067N65S3H | onsemi | Similares | TO-220 | 5 | $ 12.2806 |