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Infineon IPW65R029CFD7XKSA1 product image
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Infineon IPW65R029CFD7XKSA1RoHS

Manufacturer
Infineon
MPN
IPW65R029CFD7XKSA1
LCSC Part #
C6639964
Packaging
TO-247-3
Customer #
Key Attributes
MOSFET N-CH 650V 44A TO-247-3
Datasheetpdf iconInfineon IPW65R029CFD7XKSA1
In-Stock: 145
145 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 6.8839$ 6.88
10+$ 5.9122$ 59.12
30+$ 5.3203$ 159.61
90+$ 4.8246$ 434.21
Standard Packaging30/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-247-3
Drain to Source Voltage650V
Current - Continuous Drain(Id)44A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation305W
RDS(on)29mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.149nF
Gate Charge(Qg)145nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Introduction

AI Translation

The latest 650 V CoolMOS TM CFD7 extends the voltage class offering of the CFD7 family and is a successor to the 650 V CoolMOSTM CFD2. Resulting from improved switching performance and excellent thermal behavior, 650 V CooMOs TM CFD7 offers highest efficiency in resonant switching topologies, such as LLC and phase-shift-full-bridge (ZVS). As part of Infineon's fast body diode portfolio, this new product series blends all advantages of a fast switching technology together with superior hard commutation robustness. The CoolMOs TM CFD7 technology meets highest efficiency and reliability standards and furthermore supports high power density solutions.

Features

AI Translation
  • Ultra-fast body diode
  • 650V break down voltage
  • Best-in-class Rps(on)
  • Reduced switching losses
  • Low Rps(on) dependency over temperature

Applications

AI Translation
  • Soft Switching topologies
  • Phase-shift full-bridge (ZVS), LLC Applications - Server, Telecom, EV Charging, Solar