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MCC BSS123-TPRoHS

Manufacturer
MPN
BSS123-TP
LCSC Part #
C6521970
Packaging
SOT-23
Customer #
Key Attributes
MOSFET N-CH 100V 0.17A SOT-23
Datasheetpdf iconMCC BSS123-TP
In-Stock: 1,450
1,450 In stock, ships now
Minimum: 50Multiple: 50Sales Unit: Piece
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QtyUnit PriceTotal Amount
50+$ 0.0455$ 2.28
500+$ 0.0415$ 20.75
3,000+$ 0.0394$ 118.20
6,000+$ 0.0384$ 230.40
24,000+$ 0.0372$ 892.80
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMCC
PackagingSOT-23
Drain to Source Voltage100V
Current - Continuous Drain(Id)170mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)6pF
RDS(on)6Ω@10V
Number1 N-channel
Input Capacitance(Ciss)60pF
Gate Charge(Qg)2nC@10V

Introduction

AI Translation

200 W LDMOS power transistor for base station applications, operating frequency range 700 MHz to 1000 MHz.

Features

AI Translation
  • High Dense Cell Design for Extremely Low RDS(ON)
  • Voltage Controlled Small Signal Switch
  • Surface Mount Package
  • Epoxy Meets UL 94 V-0 Flammability Rating
  • Moisture Sensitivity Level 1
  • Halogen Free. "Green" Device
  • Lead Free Finish/RoHS Compliant

Applications

AI Translation

RF power amplifiers for GSM, GSM EDGE, W-CDMA, and CDMA base stations, as well as multi-carrier applications in the 700 MHz to 1000 MHz frequency range.