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MICROCHIP DN3545N3-G
| Manufacturer | |
| MPN | DN3545N3-G |
| LCSC Part # | C618563 |
| Packaging | TO-92-3 |
| Customer # | |
| Key Attributes | 450V 200mA 740mW 20Ω@0V 1 N-channel N-Channel TO-92-3 Single FETs, MOSFETs RoHS |
| Datasheet | MICROCHIP DN3545N3-G |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 5 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | TO-92-3 | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 450V | |
| Output Capacitance(Coss) | 40pF | |
| Current - Continuous Drain(Id) | 200mA | |
| Ciss-Input Capacitance | 360pF | |
| Pd - Power Dissipation | 740mW | |
| Reverse Transfer Capacitance (Crss) | 15pF | |
| RDS(on) | 20Ω@0V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | TO-92-3 | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 450V | |
| Output Capacitance(Coss) | 40pF | |
| Current - Continuous Drain(Id) | 200mA |
| Type | Description | |
|---|---|---|
| Ciss-Input Capacitance | 360pF | |
| Pd - Power Dissipation | 740mW | |
| Reverse Transfer Capacitance (Crss) | 15pF | |
| RDS(on) | 20Ω@0V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Type | N-Channel |
Introduction
The DN3545 Depletion-mode normally-on transistor uses an advanced vertical Diffusion Metal Oxide Semiconductor (DMOS) structure and a well-proven silicongate manufacturing process. This combination produces a device with the power-handling capabilities of bipolar transistors and the high-input impedance and positive-temperature coefficient inherent in MetalOxide Semiconductor (MOS) devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Vertical DMOS Field-Effect Transistors (FETs) are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired.
Features
- High Input Impedance
- Low Input Capacitance
- Fast Switching Speeds
- Low On-Resistance
- Free from Secondary Breakdown
- Low Input and Output Leakage
Applications
- Normally-On Switches
- Solid-State Relays
- Converters
- Linear Amplifiers
- Constant-Current Sources
- Power Supply Circuits
- Telecommunications
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 1.7904 | $ 1.79 |
| 10+ | $ 1.7628 | $ 17.63 |
| 30+ | $ 1.7465 | $ 52.40 |
| 100+ | $ 1.7286 | $ 172.86 |
Standard Packaging1000/Full Bag | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | TO-92-3 | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 450V | |
| Output Capacitance(Coss) | 40pF | |
| Current - Continuous Drain(Id) | 200mA | |
| Ciss-Input Capacitance | 360pF | |
| Pd - Power Dissipation | 740mW | |
| Reverse Transfer Capacitance (Crss) | 15pF | |
| RDS(on) | 20Ω@0V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | TO-92-3 | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 450V | |
| Output Capacitance(Coss) | 40pF | |
| Current - Continuous Drain(Id) | 200mA |
| Type | Description | |
|---|---|---|
| Ciss-Input Capacitance | 360pF | |
| Pd - Power Dissipation | 740mW | |
| Reverse Transfer Capacitance (Crss) | 15pF | |
| RDS(on) | 20Ω@0V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Type | N-Channel |
Introduction
The DN3545 Depletion-mode normally-on transistor uses an advanced vertical Diffusion Metal Oxide Semiconductor (DMOS) structure and a well-proven silicongate manufacturing process. This combination produces a device with the power-handling capabilities of bipolar transistors and the high-input impedance and positive-temperature coefficient inherent in MetalOxide Semiconductor (MOS) devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Vertical DMOS Field-Effect Transistors (FETs) are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired.
Features
- High Input Impedance
- Low Input Capacitance
- Fast Switching Speeds
- Low On-Resistance
- Free from Secondary Breakdown
- Low Input and Output Leakage
Applications
- Normally-On Switches
- Solid-State Relays
- Converters
- Linear Amplifiers
- Constant-Current Sources
- Power Supply Circuits
- Telecommunications
C618563 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| 2N70 | XCH | Similar | TO-92 | 970 | $ 0.1491 | ||
| STQ2HNK60ZR-AP | ST | Similar | TO-92 | 371 | $ 0.5517 | ||
| STQ1NK80ZR-AP | ST | Similar | TO-92-3 | 3 | $ 0.7174 | ||
| STQ1NK60ZR-AP | ST | Similar | TO-92 | 1,060 | $ 0.2581 | ||
| STQ1HNK60R-AP | ST | Similar | TO-92 | 50 | $ 0.4401 |