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onsemi FDMS86252LRoHS

Manufacturer
onsemi
MPN
FDMS86252L
LCSC Part #
C606108
Packaging
Power-56-8
Customer #
Key Attributes
MOSFET N-CH 150V 12A Power-56-8
Datasheetpdf icononsemi FDMS86252L
In-Stock: 2,969
2,969 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.2874$ 1.29
10+$ 1.0596$ 10.60
30+$ 0.9343$ 28.03
100+$ 0.7927$ 79.27
500+$ 0.7292$ 364.60
1,000+$ 0.7015$ 701.50
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingPower-56-8
Drain to Source Voltage150V
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)3pF
RDS(on)46mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.335nF
Gate Charge(Qg)15nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This N-channel MOSFET is manufactured using Fairchild Semiconductor's advanced PowerTrench® process, which incorporates shielded gate technology. The process is optimized for on-resistance while maintaining excellent switching performance.

Features

AI Translation
  • Shield gate MOSFET technology
  • Max rDS(on) = 56 mΩ at VGS = 10 V, ID = 4.4 A
  • Max rDS(on) = 71 mΩ at VGS = 6 V, ID = 3.8 A
  • Max rDS(on) = 75 mΩ at VGS = 4.5 V, ID = 3.7 A
  • Advanced package and silicon combination for low rDS(on) and high efficiency
  • Next-generation enhanced body diode technology with soft recovery characteristics
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS compliant

Applications

AI Translation
  • OR-gate FET / load switch
  • Synchronous rectification
  • DC-DC conversion