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ST STGP19NC60KDRoHS

Manufacturer
MPN
STGP19NC60KD
LCSC Part #
C59521
Packaging
TO-220
Customer #
Key Attributes
IGBT 600V 35A TO-220
Datasheetpdf iconST STGP19NC60KD

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/Single IGBTs
ManufacturerST
PackagingTO-220
Td(off)105ns
Pd - Power Dissipation125W
Td(on)30ns
Operating Temperature-55℃~+150℃@(Tj)
Current - Collector(Ic)35A
Collector-Emitter Breakdown Voltage (Vces)600V
Reverse Transfer Capacitance (Cres)127pF
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4.5V@250uA
Vce Saturation(VCE(sat))2.75V@12A,15V
Reverse Recovery Time(trr)31ns
Switching Energy(Eoff)255uJ
Turn-On Energy (Eon)165uJ
Input Capacitance(Cies)-
Output Capacitance(Coes)1.17nF
Gate Charge(Qg)55nC

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

Features

AI Translation
  • Low on-voltage drop (VCE(sat))
  • Low Cres / Cies ratio (no cross conduction susceptibility)
  • Short circuit withstand time 10 μs
  • IGBT co-packaged with ultra fast free-wheeling diode

Applications

AI Translation
  • High frequency inverters
  • Motor drivers
In-Stock: 2,767
2,767 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.2208$ 1.22
10+$ 1.023$ 10.23
30+$ 0.9144$ 27.43
100+$ 0.7539$ 75.39
500+$ 0.6988$ 349.40
1,000+$ 0.6745$ 674.50
Standard Packaging50/Full Tube
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