VBsemi Elec IRLML2030TRPBF-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | IRLML2030TRPBF-VB |
| LCSC Part # | C5878821 |
| Packaging | SOT-23(TO-236) |
| Customer # | |
| Key Attributes | MOSFET N-CH 30V 6.5A SOT-23(TO-236) |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | SOT-23(TO-236) | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 45pF | |
| Current - Continuous Drain(Id) | 6.5A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.1V | |
| Pd - Power Dissipation | 1.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF | |
| RDS(on) | 30mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 335pF | |
| Gate Charge(Qg) | 4.5nC@10V | |
| Type | N-Channel |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Compliant with halogen-free requirements as defined by IEC 61249-2-21
- Trench power MOSFET
- 100% Rg tested
- Compliant with RoHS Directive 2002/95/EC
In-Stock: 100
100 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.0957$ 0.0814 | $ 0.41 |
| 50+ | $ 0.0765$ 0.0651 | $ 3.26 |
| 150+ | $ 0.0669$ 0.0569 | $ 8.54 |
| 500+ | $ 0.0597$ 0.0508 | $ 25.40 |
| 3,000+ | $ 0.0499$ 0.0425 | $ 127.50 |
| 6,000+ | $ 0.047$ 0.0400 | $ 240.00 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | SOT-23(TO-236) | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 45pF | |
| Current - Continuous Drain(Id) | 6.5A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.1V | |
| Pd - Power Dissipation | 1.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF | |
| RDS(on) | 30mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 335pF | |
| Gate Charge(Qg) | 4.5nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Compliant with halogen-free requirements as defined by IEC 61249-2-21
- Trench power MOSFET
- 100% Rg tested
- Compliant with RoHS Directive 2002/95/EC
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



