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XTX PN27G01ABGITG product image
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XTX PN27G01ABGITGRoHS

Manufacturer
XTXAsian Brands
MPN
PN27G01ABGITG
LCSC Part #
C558834
Packaging
BGA-24(6x8)
Customer #
Key Attributes
BGA NAND
Datasheetpdf iconXTX PN27G01ABGITG
In-Stock: 296
296 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 8.3504$ 6.6804$ 6.68
10+$ 8.0042$ 6.4034$ 64.03
30+$ 7.7922$ 6.2338$ 187.01
100+$ 7.6143$ 6.0915$ 609.15
Standard Packaging377/Full Tray
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory (ICs)
ManufacturerXTX
PackagingBGA-24(6x8)
Memory Size1Gbit
Voltage - Supply2.7V~3.6V
Operating temperature-40℃~+85℃
Program / Erase Cycles-
Clock Frequency-
FeaturesRead buffer function;Copy back write function;Software reset function;Hardware write protection function;ECC error correction function
Data Retention - TDR (Year)10 years
Block Erase Time(tBE)2.5ms
Write Cycle Time(tWC)25ns
Page Programming Time (Tpp)300us
Standby Supply Current50uA
Interface-

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging377
Sales UnitPiece

Introduction

AI Translation

The PN27G01A is a single 3.3V 1Gbit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 128) bytes × 64 pages × 1024 blocks. The device has a 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increments. The Erase operation is implemented in a single block unit (128 KB + 8 KB: 2176 bytes × 64 pages). The PN27G01A is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.

Features

AI Translation
  • Single Level per Cell (SLC) Technology
  • ECC requirement: 8bit/512Bytes
  • Power Supply Voltage Voltage range: 2.7V ~ 3.6V
  • Organization Page size: x8 <2048+128> bytes; 128- bytes spare area
  • Block size: x8 <128kB+8kB> bytes 1004 block (min) ~ 1024 block (max)
  • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy
  • Access time Cell array to register: 25μs (max) Serial Read Cycle: 25 ns (min) (CL = 50pF)
  • Program/Erase time Auto Page Program: 300 µs /page (typ.) Auto Block Erase: 2.5 ms/block( typ.)
  • Reliability 10 Year Data retention (Typ)