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onsemi NSVMMBD352WT1G product image
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onsemi NSVMMBD352WT1GRoHS

Manufacturer
onsemi
MPN
NSVMMBD352WT1G
LCSC Part #
C556466
Packaging
SOT-323-3
Customer #
Key Attributes
1 Pair Series Connection 600mV@10mA 7V SOT-323-3 RF Diodes RoHS
Datasheetpdf icononsemi NSVMMBD352WT1G

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Diodes/RF Diodes
Manufactureronsemi
PackagingSOT-323-3
Non-Repetitive Peak Forward Surge Current-
Diode Configuration1 Pair Series Connection
Current - Rectified-
Operating Junction Temperature Range-55℃~+150℃
Reverse Leakage Current (Ir)10uA@7V
Voltage - Forward(Vf@If)600mV@10mA
DC Reverse Voltage(Vr)7V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra- fast switching circuits.

Features

AI Translation
  • Very Low Capacitance - Less Than 1.0pF@0V
  • Low Forward Voltage - 0.5V (Typ) @ IF = 10mA
  • AEC Qualified and PPAP Capable
  • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
  • These Devices are Pb- Free, Halogen Free/BFR Free and are RoHS Compliant

Applications

AI Translation
  • UHF mixer applications
  • detector
  • ultra- fast switching circuits
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.1086$ 0.11
200+$ 0.042$ 8.40
500+$ 0.0406$ 20.30
1,000+$ 0.0398$ 39.80
Standard Packaging3000/Full Reel
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