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Nexperia PSMN2R5-40YLDX
| Manufacturer | |
| MPN | PSMN2R5-40YLDX |
| LCSC Part # | C553257 |
| Packaging | SOT-669 |
| Customer # | |
| Key Attributes | 147W 40V 160A 1.75V 2.6mΩ@10V 1 N-channel N-Channel SOT-669 Single FETs, MOSFETs RoHS |
| Datasheet | Nexperia PSMN2R5-40YLDX |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | SOT-669 | |
| Output Capacitance(Coss) | - | |
| Pd - Power Dissipation | 147W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 160A | |
| Gate Threshold Voltage (Vgs(th)) | 1.75V | |
| Reverse Transfer Capacitance (Crss@Vds) | 310pF | |
| RDS(on) | 2.6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.583nF | |
| Gate Charge(Qg) | 78nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | SOT-669 | |
| Output Capacitance(Coss) | - | |
| Pd - Power Dissipation | 147W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 160A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.75V | |
| Reverse Transfer Capacitance (Crss@Vds) | 310pF | |
| RDS(on) | 2.6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.583nF | |
| Gate Charge(Qg) | 78nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
160 A logic-level gate drive N-channel enhancement-mode MOSFET featuring advanced TrenchMOS superjunction technology in a 175 °C LFPAK56 package. Designed and qualified for high-performance power switching applications.
Features
AI Translation
- Continuous ID(max) rating of 160 A
- Avalanche-rated, 100% tested at IAS = 150 A
- Robust Safe Operating Area (linear mode) rating
- NextPower-S3 technology enabling "ultra-fast switching and soft body diode recovery"
- Low QRR, QG, and QGD for high system efficiency and low EMI design
- Schottky-enhanced body diode with low VSD, low QRR, soft recovery, and low IDSS leakage
- Optimized for 4.5 V gate drive utilizing NextPower-S3 super-junction technology
- High-reliability LFPAK (Power SO8) package with copper clip and solder die attach, rated for operation up to 175 °C
- Exposed leads for wave soldering, enabling visual solder joint inspection with high joint quality
- Low parasitic inductance and resistance
Applications
AI Translation
- High-performance synchronous rectification
- DC-DC converter
- Brushless DC motor control
- Battery protection
- Load switch and electronic fuse
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 1.5979 | $ 1.60 |
| 200+ | $ 0.6191 | $ 123.82 |
| 500+ | $ 0.5975 | $ 298.75 |
| 1,500+ | $ 0.5867 | $ 880.05 |
Standard Packaging1500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | SOT-669 | |
| Output Capacitance(Coss) | - | |
| Pd - Power Dissipation | 147W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 160A | |
| Gate Threshold Voltage (Vgs(th)) | 1.75V | |
| Reverse Transfer Capacitance (Crss@Vds) | 310pF | |
| RDS(on) | 2.6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.583nF | |
| Gate Charge(Qg) | 78nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | SOT-669 | |
| Output Capacitance(Coss) | - | |
| Pd - Power Dissipation | 147W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 160A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.75V | |
| Reverse Transfer Capacitance (Crss@Vds) | 310pF | |
| RDS(on) | 2.6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.583nF | |
| Gate Charge(Qg) | 78nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
160 A logic-level gate drive N-channel enhancement-mode MOSFET featuring advanced TrenchMOS superjunction technology in a 175 °C LFPAK56 package. Designed and qualified for high-performance power switching applications.
Features
AI Translation
- Continuous ID(max) rating of 160 A
- Avalanche-rated, 100% tested at IAS = 150 A
- Robust Safe Operating Area (linear mode) rating
- NextPower-S3 technology enabling "ultra-fast switching and soft body diode recovery"
- Low QRR, QG, and QGD for high system efficiency and low EMI design
- Schottky-enhanced body diode with low VSD, low QRR, soft recovery, and low IDSS leakage
- Optimized for 4.5 V gate drive utilizing NextPower-S3 super-junction technology
- High-reliability LFPAK (Power SO8) package with copper clip and solder die attach, rated for operation up to 175 °C
- Exposed leads for wave soldering, enabling visual solder joint inspection with high joint quality
- Low parasitic inductance and resistance
Applications
AI Translation
- High-performance synchronous rectification
- DC-DC converter
- Brushless DC motor control
- Battery protection
- Load switch and electronic fuse
C553257 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| PSMN2R8-40YSDX | Nexperia | SOT-669 | 50 | $ 2.8762 | ||
| PSMN1R5-40YSDX | Nexperia | SOT-669 | 38 | $ 2.0731 | ||
| PSMN1R9-40YSDX | Nexperia | SOT-669 | 0 | $ 1.6608 | ||
| PSMN2R2-40YSDX | Nexperia | SOT-669 | 0 | $ 1.3443 | ||
| BUK9Y1R3-40HX | Nexperia | SOT-669 | 0 | $ 2.4702 |