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Nexperia PMF63UNEX
| Manufacturer | |
| MPN | PMF63UNEX |
| LCSC Part # | C552952 |
| Packaging | SOT-323 |
| Customer # | |
| Key Attributes | MOSFET N-CH 20V 2.2A SOT-323 |
| Datasheet |  Nexperia PMF63UNEX |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | SOT-323 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 2.2A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 395mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF | |
| RDS(on) | 65mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 289pF | |
| Gate Charge(Qg) | 5.85nC@4.5V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | SOT-323 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 2.2A | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 395mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF | |
| RDS(on) | 65mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 289pF | |
| Gate Charge(Qg) | 5.85nC@4.5V |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
AI Translation
- Trench MOSFET technology
- Low threshold voltage
- ElectroStatic Discharge (ESD) protection > 2 kV HBM
Applications
AI Translation
- LED driver
- Power management
- Low-side loadswitch
- Switching circuits
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Minimum: 5Multiple: 5Sales Unit: Piece
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 5+ | $ 0.0956 | $ 0.48 |
| 50+ | $ 0.0936 | $ 4.68 |
| 150+ | $ 0.0923 | $ 13.85 |
| 500+ | $ 0.0869 | $ 43.45 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | SOT-323 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 2.2A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 395mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF | |
| RDS(on) | 65mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 289pF | |
| Gate Charge(Qg) | 5.85nC@4.5V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Nexperia | |
| Packaging | SOT-323 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 2.2A | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 395mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF | |
| RDS(on) | 65mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 289pF | |
| Gate Charge(Qg) | 5.85nC@4.5V |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features
AI Translation
- Trench MOSFET technology
- Low threshold voltage
- ElectroStatic Discharge (ESD) protection > 2 kV HBM
Applications
AI Translation
- LED driver
- Power management
- Low-side loadswitch
- Switching circuits
C552952 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| TPCJ2102 | TECH PUBLIC | SOT-323 | 5,420 | $ 0.0517 | ||
| SP2102T3 | Siliup | SOT-323 | 880 | $ 0.0211 | ||
| PMF63UNE-HXY | HXY MOSFET | SOT-323 | 80 | $0.0683 $0.0718 | ||
| TPM2102BC3 | TECH PUBLIC | SOT-323 | 300 | $ 0.0425 | ||
| DMN2065UW-7 | DIODES | SOT-323 | 25 | $ 0.1306 | ||
| DMN2055UW-13 | DIODES | SOT-323 | 30 | $ 0.1178 | ||
| DMN2055UWQ-7 | DIODES | SOT-323 | 10 | $ 0.098 | ||
| DMN2055UWQ-13 | DIODES | SOT-323 | 0 | $ 0.1533 | ||
| DMN2055UW-7 | DIODES | SOT-323 | 0 | $ 0.1351 | ||
| SK2302AW | Shikues | SOT-323 | 0 | $ 0.0335 |