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Nexperia PMDXB600UNEZRoHS

Manufacturer
MPN
PMDXB600UNEZ
LCSC Part #
C552764
Packaging
DFN1010-6
Customer #
Key Attributes
MOSFET N-CH ARR 20V 600mA DFN1010-6
Datasheetpdf iconNexperia PMDXB600UNEZ

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerNexperia
PackagingDFN1010-6
Current - Continuous Drain(Id)600mA
RDS(on)470mΩ@4.5V
Pd - Power Dissipation265mW
Gate Threshold Voltage (Vgs(th))700mV
Drain to Source Voltage20V
Reverse Transfer Capacitance (Crss@Vds)4.2pF
Number2 N-Channel
Input Capacitance(Ciss)21.3pF
Gate Charge(Qg)700pC@4.5V
Operating Temperature-55℃~+150℃

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

AI Translation
  • Trench MOSFET technology
  • Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
  • Exposed drain pad for excellent thermal conduction
  • ElectroStatic Discharge (ESD) protection >1 kV HBM
  • Drain-source on-state resistance RDSOn = 470 mΩ

Applications

AI Translation
  • Relay driver
  • High-speed line driver
  • Low-side load switch Switching circuits
In-Stock: 7,445
7,445 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1412$ 0.71
50+$ 0.1118$ 5.59
150+$ 0.0971$ 14.57
500+$ 0.0861$ 43.05
2,500+$ 0.0773$ 193.25
5,000+$ 0.0729$ 364.50
Standard Packaging5000/Full Reel
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