RENESAS 71V256SA15YI

The IDT 71V256SA is a 262,144-bit high-speed SRAM organized as 32K×8. It is fabricated using IDT's high-performance, high-reliability CMOS technology. The IDT71V256SA features excellent low-power characteristics while maintaining very high performance. The fastest 10ns address access time makes it ideal for 3.3V secondary cache in 3.3V desktop designs. When power management logic places the IDT71V256SA in standby mode, its ultra-low power consumption helps extend battery life. By driving CS high, the SRAM automatically enters low-power standby mode and remains in standby as long as CS stays high. Furthermore, in full standby mode (CS at CMOS level, f = 0), power dissipation is guaranteed to be less than 6.6mW and is typically much lower. The IDT71V256SA is available in 28-pin 300-mil SOJ and 28-pin 300-mil TSOP Type I packages.

• Ideal for high-performance processor L2 cache
• Available in commercial (0°C to +70°C) and industrial (-40°C to +85°C) temperature ranges
• Fast access time: 10/12/15/20ns for commercial and industrial grades
• Low standby current (max): 2mA in full standby
• Space-saving compact packages: 28-pin 300-mil SOJ, 28-pin TSOP Type I
• Fabricated with advanced high-performance CMOS technology
• LVTTL-compatible inputs and outputs
• Single 3.3V (±0.3V) supply

• High-performance processor L2 cache