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EDA ModelsEasyEDA
Nexperia PDTC115EM,315
| Manufacturer | |
| MPN | PDTC115EM,315 |
| LCSC Part # | C552164 |
| Packaging | SOT-883-3 |
| Customer # | |
| Key Attributes | TRANS PREBIAS 50V SOT-883-3 |
| Datasheet |  Nexperia PDTC115EM,315 |
| Alternative Parts | 6 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | Nexperia | |
| Packaging | SOT-883-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 10V | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 150mV | |
| Current - Collector(Ic) | 20mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 130kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 150mW | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.5V@1mA,0.3V | |
| Operating temperature | -65℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | Nexperia | |
| Packaging | SOT-883-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 10V | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 150mV | |
| Current - Collector(Ic) | 20mA |
| Type | Description | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 130kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 150mW | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.5V@1mA,0.3V | |
| Operating temperature | -65℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
NPN resistor equipped transistor (see “Simplified outline, symbol and pinning” for package details).
Features
AI Translation
- Built-in bias resistors
- Simplified circuit design
- Reduction of component count
- Reduced pick and place costs
Applications
AI Translation
- General purpose switching and amplification
- Inverter and interface circuits
- Circuit driver
In-Stock: 6,660
6,660 In stock, ships now
Minimum: 10Multiple: 10Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0486 | $ 0.49 |
| 100+ | $ 0.0385 | $ 3.85 |
| 300+ | $ 0.0334 | $ 10.02 |
| 1,000+ | $ 0.0296 | $ 29.60 |
| 5,000+ | $ 0.0242 | $ 121.00 |
| 10,000+ | $ 0.0226 | $ 226.00 |
Standard Packaging10000/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | Nexperia | |
| Packaging | SOT-883-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 10V | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 150mV | |
| Current - Collector(Ic) | 20mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 130kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 150mW | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.5V@1mA,0.3V | |
| Operating temperature | -65℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | Nexperia | |
| Packaging | SOT-883-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | 10V | |
| DC Current Gain | 80 | |
| Vce Saturation(VCE(sat)) | 150mV | |
| Current - Collector(Ic) | 20mA |
| Type | Description | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 130kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 150mW | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 1.5V@1mA,0.3V | |
| Operating temperature | -65℃~+150℃ | |
| type | NPN | |
| Number | 1 NPN (Pre-Biased) |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
NPN resistor equipped transistor (see “Simplified outline, symbol and pinning” for package details).
Features
AI Translation
- Built-in bias resistors
- Simplified circuit design
- Reduction of component count
- Reduced pick and place costs
Applications
AI Translation
- General purpose switching and amplification
- Inverter and interface circuits
- Circuit driver
C552164 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| PDTC114YM,315 | Nexperia | SOT-883-3 | 9,570 | $ 0.0569 | ||
| DTC143ZDC | PJSEMI | DFN-3L(1x0.6) | 1,680 | $0.0190 $0.0316 | ||
| PDTC143ZM,315 | Nexperia | SOT-883-3 | 30 | $ 0.0613 | ||
| PDTC114YMB,315 | Nexperia | SOT-883-3 | 0 | $ 0.0308 | ||
| PDTC124EMB,315 | Nexperia | SOT-883-3 | 0 | $ 0.0175 | ||
| PDTC114EMB,315 | Nexperia | SOT-883-3 | 0 | $ 0.0097 |