R+O 2N7002DW

Manufacturer	R+OAsian Brands
MPN	2N7002DW
LCSC Part #	C55068174
Packaging	SOT-363
Customer #
Key Attributes	60V 115mA 1.76V 200mW 7.5Ω@5V 2 N-Channel SOT-363 Single FETs, MOSFETs RoHS
Datasheet	R+O 2N7002DW

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	R+O
Packaging	SOT-363
Drain to Source Voltage	60V
Current - Continuous Drain(Id)	115mA
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.76V
Pd - Power Dissipation	200mW
RDS(on)	7.5Ω@5V
Reverse Transfer Capacitance (Crss@Vds)	19pF
Number	2 N-Channel
Input Capacitance(Ciss)	50pF

In-Stock: 3,020

3,020 In stock, ships now

Add to BOM List

Qty	Unit Price	Total Amount
10+	$ 0.0553	$ 0.55
100+	$ 0.0441	$ 4.41
300+	$ 0.0385	$ 11.55
3,000+	$ 0.0342	$ 102.60
6,000+	$ 0.0309	$ 185.40
9,000+	$ 0.0292	$ 262.80
Standard Packaging3000/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	R+O
Packaging	SOT-363
Drain to Source Voltage	60V
Current - Continuous Drain(Id)	115mA
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.76V
Pd - Power Dissipation	200mW
RDS(on)	7.5Ω@5V
Reverse Transfer Capacitance (Crss@Vds)	19pF
Number	2 N-Channel
Input Capacitance(Ciss)	50pF