Minos FGH60N60SMD-MNS

Manufacturer	MinosAsian Brands
MPN	FGH60N60SMD-MNS
LCSC Part #	C54839596
Packaging	TO-247
Customer #
Key Attributes	375W 120A 600V FS (Field Stop) TO-247 Single IGBTs RoHS
Datasheet	Minos FGH60N60SMD-MNS

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/IGBTs/Single IGBTs
Manufacturer	Minos
Packaging	TO-247
Pd - Power Dissipation	375W
Td(off)	130ns
Td(on)	37ns
Operating Temperature	-55℃~+175℃
Current - Collector(Ic)	120A
Collector-Emitter Breakdown Voltage (Vces)	600V
Reverse Transfer Capacitance (Cres)	31pF
IGBT Type	FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	5.5V
Vce Saturation(VCE(sat))	1.7V
Collector Cut-Off Current (Ices)	25uA
Reverse Recovery Time(trr)	52ns;69ns
Switching Energy(Eoff)	1.06mJ
Turn-On Energy (Eon)	1.39mJ
Input Capacitance(Cies)	3.036nF
Gate Charge(Qg)	137nC@15V
Output Capacitance(Coes)	122pF

In-Stock: 416

416 In stock, ships now

Add to BOM List

Qty	Unit Price	Total Amount
1+	$ 2.1965	$ 2.20
10+	$ 1.9269	$ 19.27
30+	$ 1.7595	$ 52.79
90+	$ 1.5857	$ 142.71
510+	$ 1.5077	$ 768.93
1,200+	$ 1.4752	$ 1770.24
Standard Packaging30/Full Tube

Better price for more quantity?

$

Type	Description	All
Category	Discrete Semiconductors/Transistors/IGBTs/Single IGBTs
Manufacturer	Minos
Packaging	TO-247
Pd - Power Dissipation	375W
Td(off)	130ns
Td(on)	37ns
Operating Temperature	-55℃~+175℃
Current - Collector(Ic)	120A
Collector-Emitter Breakdown Voltage (Vces)	600V
Reverse Transfer Capacitance (Cres)	31pF
IGBT Type	FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	5.5V
Vce Saturation(VCE(sat))	1.7V
Collector Cut-Off Current (Ices)	25uA
Reverse Recovery Time(trr)	52ns;69ns
Switching Energy(Eoff)	1.06mJ
Turn-On Energy (Eon)	1.39mJ
Input Capacitance(Cies)	3.036nF
Gate Charge(Qg)	137nC@15V
Output Capacitance(Coes)	122pF