5% OFF
- Rozmieszczenie wyprowadzeń
- Footprint
Zdjęcia poglądowe
Modele EDAEasyEDA
XNRUSEMI XR2321L
| Producent | XNRUSEMIAsian Brands |
| Nr części prod. | XR2321L |
| Nr LCSC | C54741575 |
| Opak. | SOT-23-3L |
| Numer Klienta | |
| Klucz. cechy | 18V 5.8A 1V 22mΩ@4.5V 1 P-Channel P-Channel SOT-23-3L Single FETs, MOSFETs |
| Karta Katalogowa | XNRUSEMI XR2321L |
| Części alternatywne | 10 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | XNRUSEMI | |
| Opak. | SOT-23-3L | |
| Drain to Source Voltage | 18V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 5.8A | |
| Output Capacitance(Coss) | 154pF | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| RDS(on) | 22mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 124pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 693pF | |
| Gate Charge(Qg) | 8nC | |
| Vgs | ±12V | |
| Type | P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | XNRUSEMI | |
| Opak. | SOT-23-3L | |
| Drain to Source Voltage | 18V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 5.8A | |
| Output Capacitance(Coss) | 154pF | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Typ | Opis | |
|---|---|---|
| RDS(on) | 22mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 124pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 693pF | |
| Gate Charge(Qg) | 8nC | |
| Vgs | ±12V | |
| Type | P-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
XR2321i is a high cell density trench N-channel MOSFET, delivering excellent on-resistance (R<sub>DS(ON)</sub>) and efficiency for most low-power switching and load switch applications. XR2321i complies with RoHS and green product requirements, and has passed full-function reliability qualification.
Funkcje
Tłumaczenie AI
- Green device available
- Ultra-low gate charge
- Excellent dV/dt immunity
- Advanced high cell density trench technology
Na stanie: 2,980
2,980 W magazynie, wysyłka natychmiastowa
Minimum: 20Wielokrotność: 20Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 20+ | $ 0.033$ 0.0314 | $ 0.63 |
| 200+ | $ 0.0259$ 0.0247 | $ 4.94 |
| 600+ | $ 0.022$ 0.0209 | $ 12.54 |
| 3,000+ | $ 0.0196$ 0.0187 | $ 56.10 |
| 9,000+ | $ 0.0176$ 0.0168 | $ 151.20 |
| 21,000+ | $ 0.0164$ 0.0156 | $ 327.60 |
Standardowa Obudowa3000/Full Reel | ||
Lepsza cena za większą ilość?
$
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | XNRUSEMI | |
| Opak. | SOT-23-3L | |
| Drain to Source Voltage | 18V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 5.8A | |
| Output Capacitance(Coss) | 154pF | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| RDS(on) | 22mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 124pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 693pF | |
| Gate Charge(Qg) | 8nC | |
| Vgs | ±12V | |
| Type | P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | XNRUSEMI | |
| Opak. | SOT-23-3L | |
| Drain to Source Voltage | 18V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 5.8A | |
| Output Capacitance(Coss) | 154pF | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Typ | Opis | |
|---|---|---|
| RDS(on) | 22mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 124pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 693pF | |
| Gate Charge(Qg) | 8nC | |
| Vgs | ±12V | |
| Type | P-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
XR2321i is a high cell density trench N-channel MOSFET, delivering excellent on-resistance (R<sub>DS(ON)</sub>) and efficiency for most low-power switching and load switch applications. XR2321i complies with RoHS and green product requirements, and has passed full-function reliability qualification.
Funkcje
Tłumaczenie AI
- Green device available
- Ultra-low gate charge
- Excellent dV/dt immunity
- Advanced high cell density trench technology
C54741575 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| XR2321 | XNRUSEMI | SOT-23 | 2,980 | $0.0235 $0.0247 | ||
| XR2313L | XNRUSEMI | SOT-23-3L | 2,280 | $0.0352 $0.037 | ||
| XR2333 | XNRUSEMI | SOT-23 | 960 | $0.0353 $0.0371 | ||
| XR2317L | XNRUSEMI | SOT-23-3L | 1,220 | $0.0441 $0.0464 | ||
| XR20P07L | XNRUSEMI | SOT-23-3L | 2,070 | $ 0.0427 | ||
| XR20P07 | XNRUSEMI | SOT-23 | 1,800 | $0.0334 $0.0351 | ||
| XR20P09L2 | XNRUSEMI | SOT-23-3L | 2,640 | $ 0.053 | ||
| XR30P07L | XNRUSEMI | SOT-23-3L | 1,610 | $0.0247 $0.026 | ||
| XR30P06L | XNRUSEMI | SOT-23-3L | 1,100 | $ 0.0427 | ||
| XR30P09L | XNRUSEMI | SOT-23-3L | 2,390 | $ 0.0543 |