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HXY MOSFET IRFR5410TRRPBF-HXY product image
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HXY MOSFET IRFR5410TRRPBF-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
IRFR5410TRRPBF-HXY
LCSC Part #
C54582842
Packaging
TO-252-2L
Customer #
Key Attributes
100V 15A 1.6V 34W 140mΩ@10V 1 P-Channel P-Channel TO-252-2L Single FETs, MOSFETs RoHS
Datasheetpdf iconHXY MOSFET IRFR5410TRRPBF-HXY
In-Stock: 50
50 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.2863$ 0.2720$ 0.27
10+$ 0.2798$ 0.2659$ 2.66
30+$ 0.2766$ 0.2628$ 7.88
100+$ 0.2717$ 0.2582$ 25.82
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingTO-252-2L
ConfigurationStandalone
Drain to Source Voltage100V
Output Capacitance(Coss)69pF
Current - Continuous Drain(Id)15A
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation34W
Reverse Transfer Capacitance (Crss@Vds)54pF
RDS(on)140mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.448nF
Gate Charge(Qg)47nC@10V
TypeP-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

IRFR5410TRRPBF utilizes advanced trench technology to deliver excellent on-state resistance (RDS(ON)), low gate charge, and operation down to 4.5V gate voltage. The device is suitable for battery protection or other switching applications.

Features

AI Translation
  • Drain-source voltage (VDS) = -100V, drain current (ID) = -15A
  • On-resistance (RDS(ON)) < 170mΩ at gate-source voltage (VGS) = -10V

Applications

AI Translation
  • Brushless motor
  • Load switch
  • Uninterruptible power supply