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HXY MOSFET AON6558RoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
AON6558
LCSC Part #
C54582692
Packaging
DFN-8L(5x6)
Customer #
Key Attributes
30V 60A 2.5V 30W 4.4mΩ@10V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS
Datasheetpdf iconHXY MOSFET AON6558
In-Stock: 45
45 In stock, ships now
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QtyUnit PriceTotal Amount
5+$ 0.1998$ 1.00
50+$ 0.1965$ 9.83
150+$ 0.1942$ 29.13
500+$ 0.192$ 96.00
Standard Packaging5000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingDFN-8L(5x6)
ConfigurationStandalone
Drain to Source Voltage30V
Current - Continuous Drain(Id)60A
Output Capacitance(Coss)498pF
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)41pF
RDS(on)4.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)814pF
Gate Charge(Qg)8nC@4.5V
TypeN-Channel

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

The AON6558 utilizes advanced SGT MOSFET technology to deliver low on-resistance (RDS(ON)), low gate charge, fast switching, and excellent avalanche characteristics. The device is specifically designed for enhanced durability and versatility.

Features

AI Translation
  • VDS = 30V, ID = 60A
  • RDS(ON) < 5.8mΩ (at VGS = 10V)

Applications

AI Translation

Consumer electronics power supply, motor control, synchronous rectification, isolated DC synchronous rectification applications