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HXY MOSFET DMP3018SFVQ-13-HXY product image
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HXY MOSFET DMP3018SFVQ-13-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
DMP3018SFVQ-13-HXY
LCSC Part #
C54582686
Packaging
DFN-8L(3x3)
Customer #
Key Attributes
30V 55A 1.5V 21.5W 8.5mΩ@10V 1 P-Channel P-Channel DFN-8L(3x3) Single FETs, MOSFETs RoHS
Datasheetpdf iconHXY MOSFET DMP3018SFVQ-13-HXY
In-Stock: 49
49 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.3378$ 0.3210$ 0.32
10+$ 0.3313$ 0.3148$ 3.15
30+$ 0.3264$ 0.3101$ 9.30
100+$ 0.3216$ 0.3056$ 30.56
Standard Packaging5000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingDFN-8L(3x3)
ConfigurationStandalone
Drain to Source Voltage30V
Output Capacitance(Coss)346pF
Current - Continuous Drain(Id)55A
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation21.5W
Reverse Transfer Capacitance (Crss@Vds)319pF
RDS(on)8.5mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.8nF
Gate Charge(Qg)30nC@10V
TypeP-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

DMP3018SFVQ - 13 utilizes advanced trench technology to deliver excellent on-resistance (RDS(ON)), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications.

Features

AI Translation
  • VDS = -30V, ID = -55A
  • RDS(ON) < 11mΩ (at VGS = -10V)

Applications

AI Translation
  • Battery protection
  • Load switch
  • Uninterruptible power supply