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HXY MOSFET DI028P03PT-HXY
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | DI028P03PT-HXY |
| LCSC Part # | C54582661 |
| Packaging | DFN-8L(3x3) |
| Customer # | |
| Key Attributes | 30V 70A 31.2W 6.5mΩ@10V 1 P-Channel P-Channel DFN-8L(3x3) Single FETs, MOSFETs |
| Datasheet | HXY MOSFET DI028P03PT-HXY |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | DFN-8L(3x3) | |
| Configuration | Standalone | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 529pF | |
| Current - Continuous Drain(Id) | 70A | |
| Ciss-Input Capacitance | 4.32nF | |
| Pd - Power Dissipation | 31.2W | |
| Reverse Transfer Capacitance (Crss) | 487pF | |
| RDS(on) | 6.5mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 45nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | DFN-8L(3x3) | |
| Configuration | Standalone | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 529pF | |
| Current - Continuous Drain(Id) | 70A | |
| Ciss-Input Capacitance | 4.32nF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 31.2W | |
| Reverse Transfer Capacitance (Crss) | 487pF | |
| RDS(on) | 6.5mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 45nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The DI028P03PT utilizes advanced trench technology to deliver excellent on-resistance (RDS(ON)), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications.
Features
AI Translation
- Drain-Source Voltage (VDS) = -30V, Drain Current (ID) = -70A
- On-Resistance (RDS(ON)) < 9.3mΩ at Gate-Source Voltage (VGS) = -10V
Applications
AI Translation
- Battery protection
- Load switch
- Uninterruptible power supply
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In-Stock: 17
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Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.8887$ 0.8443 | $ 0.84 |
| 10+ | $ 0.7295$ 0.6931 | $ 6.93 |
| 30+ | $ 0.6499$ 0.6175 | $ 18.53 |
| 100+ | $ 0.5703$ 0.5418 | $ 54.18 |
| 500+ | $ 0.4679$ 0.4446 | $ 222.30 |
| 1,000+ | $ 0.4436$ 0.4215 | $ 421.50 |
Standard Packaging5000/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | DFN-8L(3x3) | |
| Configuration | Standalone | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 529pF | |
| Current - Continuous Drain(Id) | 70A | |
| Ciss-Input Capacitance | 4.32nF | |
| Pd - Power Dissipation | 31.2W | |
| Reverse Transfer Capacitance (Crss) | 487pF | |
| RDS(on) | 6.5mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 45nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | DFN-8L(3x3) | |
| Configuration | Standalone | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 529pF | |
| Current - Continuous Drain(Id) | 70A | |
| Ciss-Input Capacitance | 4.32nF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 31.2W | |
| Reverse Transfer Capacitance (Crss) | 487pF | |
| RDS(on) | 6.5mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 45nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The DI028P03PT utilizes advanced trench technology to deliver excellent on-resistance (RDS(ON)), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications.
Features
AI Translation
- Drain-Source Voltage (VDS) = -30V, Drain Current (ID) = -70A
- On-Resistance (RDS(ON)) < 9.3mΩ at Gate-Source Voltage (VGS) = -10V
Applications
AI Translation
- Battery protection
- Load switch
- Uninterruptible power supply
C54582661 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| HSiSH101DN | HXY MOSFET | Similar | DFN-8L(3x3) | 50 | $0.3165 $0.3331 | ||
| SI7111EDN-T1-GE3-HXY | HXY MOSFET | Similar | DFN-8L(3x3) | 100 | $0.4286 $0.5357 | ||
| RQ3E120ATTB-HXY | HXY MOSFET | Similar | DFN-8L(3x3) | 1,960 | $0.1501 $0.158 | ||
| DI050P03PT-AQ-HXY | HXY MOSFET | Similar | DFN-8L(3x3) | 47 | $0.5774 $0.6077 | ||
| UPA2814T1S-E2-AT-HXY | HXY MOSFET | Similar | DFN-8L(3x3) | 46 | $0.9662 $1.017 |