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HXY MOSFET IPD50P04P4L11ATMA2-HXY product image
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HXY MOSFET IPD50P04P4L11ATMA2-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
IPD50P04P4L11ATMA2-HXY
LCSC Part #
C54582536
Packaging
TO-252-2L
Customer #
Key Attributes
40V 80A 1.6V 81W 6.4mΩ@10V 1 P-Channel P-Channel TO-252-2L Single FETs, MOSFETs RoHS
Datasheetpdf iconHXY MOSFET IPD50P04P4L11ATMA2-HXY
In-Stock: 200
200 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.5104$ 0.4849$ 0.48
10+$ 0.4044$ 0.3842$ 3.84
30+$ 0.3588$ 0.3409$ 10.23
100+$ 0.3033$ 0.2882$ 28.82
500+$ 0.2772$ 0.2634$ 131.70
1,000+$ 0.2626$ 0.2495$ 249.50
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingTO-252-2L
ConfigurationStandalone
Drain to Source Voltage40V
Current - Continuous Drain(Id)80A
Output Capacitance(Coss)430pF
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation81W
RDS(on)6.4mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)385pF
Number1 P-Channel
Input Capacitance(Ciss)5.295nF
Gate Charge(Qg)110nC@10V
TypeP-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

The IPD50P04P4L11ATMA2 utilizes advanced trench technology to deliver excellent on-state resistance (RDS(ON)), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications. The package is TO-252-2L.

Features

AI Translation
  • Drain-Source Voltage (VDS) = -40V, Drain Current (ID) = -80A
  • On-Resistance (RDS(ON)) < 8.2mΩ at VGS = 10V

Applications

AI Translation
  • Battery protection
  • Load switch
  • Uninterruptible power supply
  • P-channel MOSFET