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HXY MOSFET IRFR3711ZTRL-HXY product image
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HXY MOSFET IRFR3711ZTRL-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
IRFR3711ZTRL-HXY
LCSC Part #
C54582418
Packaging
TO-252-2L
Customer #
Key Attributes
20V 60A 750mV 60W 4.5mΩ@4.5V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs RoHS
Datasheetpdf iconHXY MOSFET IRFR3711ZTRL-HXY
In-Stock: 50
50 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.212$ 1.21
10+$ 1.1845$ 11.85
30+$ 1.1667$ 35.00
100+$ 1.1489$ 114.89
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingTO-252-2L
ConfigurationStandalone
Drain to Source Voltage20V
Output Capacitance(Coss)500pF
Current - Continuous Drain(Id)60A
Gate Threshold Voltage (Vgs(th))750mV
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)200pF
RDS(on)4.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2nF
Gate Charge(Qg)27nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

The IRFR3711ZTRL utilizes advanced trench technology to deliver excellent on-state resistance (RDS(ON)), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications. The package is TO-252-2L.

Features

AI Translation
  • Drain-source voltage (VDS) = 20V, drain current (ID) = 60A
  • On-resistance (RDS(ON)) < 6mΩ at gate-source voltage (VGS) = 4.5V

Applications

AI Translation
  • Battery protection
  • Load switch
  • Uninterruptible power supply