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HXY MOSFET NTR4101PT1H-HXY product image
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HXY MOSFET NTR4101PT1H-HXYRoHS

Manufacturer
HXY MOSFETAsian Brands
MPN
NTR4101PT1H-HXY
LCSC Part #
C54582403
Packaging
SOT-23
Customer #
Key Attributes
20V 3A 700mV 1W 60mΩ@4.5V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS
Datasheetpdf iconHXY MOSFET NTR4101PT1H-HXY
In-Stock: 95
95 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1192$ 0.1133$ 0.57
50+$ 0.1166$ 0.1108$ 5.54
150+$ 0.1148$ 0.1091$ 16.37
500+$ 0.1131$ 0.1075$ 53.75
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHXY MOSFET
PackagingSOT-23
ConfigurationStandalone
Drain to Source Voltage20V
Current - Continuous Drain(Id)3A
Output Capacitance(Coss)75pF
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation1W
RDS(on)60mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)55pF
Number1 P-Channel
Input Capacitance(Ciss)405pF
Gate Charge(Qg)3.3nC@2.5V
TypeP-Channel
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The NTR4101PT1H utilizes advanced trench technology to deliver excellent on-resistance RDS(ON). This device is suitable for use as a load switch or in PWM applications.

Features

AI Translation
  • Drain-source voltage V<sub>DS</sub> = -20V, drain current I<sub>D</sub> = -3A
  • On-resistance R<sub>DS(ON)</sub> < 80mΩ at gate-source voltage V<sub>GS</sub> = -4.5V

Applications

AI Translation
  • Battery protection
  • Load switch
  • Uninterruptible power supply