JSCJ MMDT5401(RANGE:100-300)
| Manufacturer | JSCJAsian Brands |
| MPN | MMDT5401(RANGE:100-300) |
| LCSC Part # | C54540 |
| Packaging | SOT-363 |
| Customer # | |
| Key Attributes | TRANS PNP 150V 0.2A SOT-363 |
| Datasheet | JSCJ MMDT5401(RANGE:100-300) |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | JSCJ | |
| Packaging | SOT-363 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 50nA | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 150V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 50 | |
| Current - Collector(Ic) | 200mA | |
| Pd - Power Dissipation | 200mW | |
| Number | 2 PNP | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 200mV |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | JSCJ | |
| Packaging | SOT-363 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 50nA | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 150V |
| Type | Description | |
|---|---|---|
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 50 | |
| Current - Collector(Ic) | 200mA | |
| Pd - Power Dissipation | 200mW | |
| Number | 2 PNP | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 200mV |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Epitaxial Planar Die Construction
- Complementary NPN Type Available(MMDT 5551)
- Ideal for Medium Power Amplification and Switching
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
In-Stock: 12,410
12,410 In stock, ships now
Minimum: 10Multiple: 10Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0385 | $ 0.39 |
| 100+ | $ 0.0303 | $ 3.03 |
| 300+ | $ 0.0262 | $ 7.86 |
| 3,000+ | $ 0.0232 | $ 69.60 |
| 6,000+ | $ 0.0207 | $ 124.20 |
| 9,000+ | $ 0.0195 | $ 175.50 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | JSCJ | |
| Packaging | SOT-363 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 50nA | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 150V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 50 | |
| Current - Collector(Ic) | 200mA | |
| Pd - Power Dissipation | 200mW | |
| Number | 2 PNP | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 200mV |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | JSCJ | |
| Packaging | SOT-363 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 50nA | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 150V |
| Type | Description | |
|---|---|---|
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 50 | |
| Current - Collector(Ic) | 200mA | |
| Pd - Power Dissipation | 200mW | |
| Number | 2 PNP | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 200mV |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Epitaxial Planar Die Construction
- Complementary NPN Type Available(MMDT 5551)
- Ideal for Medium Power Amplification and Switching
C54540 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |



